BUT30 - STMicroelectronics

BUT30 NPN TRANSISTOR POWER MODULE

BUT30V NPN TRANSISTOR POWER MODULE s s s s s s s NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE Pin 4 not con nected APPLICATIONS: s MOTOR CONTROL s SMPS & UPS s WELDING EQUIPMENT ISOTOP INTERNAL SCHEMATIC DIAGRAM A.

Features

-heats ink With Conductive Grease Applied Max Max 0.5 0.05 o C/W C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CER I CEV I EBO Parameter Collector Cut-off Current (R BE = 5 Ω ) Collector Cut-off Current (V BE = -5V) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = V CEV V CE = V CEV V CE = V CEV V CE = V CEV V EB = 5 V I C = 0.2 A L = 25 mH V c la mp = 125 V I C = 100 A IC IC IC IC IC IC IC IC = = = = = = = = 50 A 50 A 100 A 100 A 50 A 50 A 100 A 100 A V CE = 5 V IB IB IB IB IB IB IB IB = = = = = = = = 2.5 A 2.5 A 10 A 10 A 2.5 A 2.5 A 10 A .