BUS23A - Inchange Semiconductor

BUS23A Silicon NPN Power Transistor

· High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V (Min)-BUS23 350V (Min)-BUS23A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER.

Features

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUS23 BUS23A IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BUS23 IC= 10A; IB= 1.33A BUS23A IC= 10A; IB= 1.67A VBE(sat) Base-Emitter Saturation Voltage BUS23 IC= 10A; IB= 1.33A BUS23A IC= 10A; IB= 1.67A ICES Collector Cutoff Current VCE=VCESMmax; VBE= 0 IEBO Emitter Cutoff Current VEB= 9V; IC= 0 hFE DC Current Gain IC= 1.5A ; VCE= 5V BUS23/A .