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·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ·For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect.
r Breakdown Voltage IC= 30mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 35A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 35A; IB= 2A ICEO Collector Cutoff Current VCE= 80V; IB=0 ICBO Collector Cutoff Current VCB= 150V; IE=0 hFE-1 DC Current Gain IC= 80A; VCE= 4V BUP49 MIN MAX UNIT 80 V 150 V 8 V 1.0 V 1.5 V 0.1 mA 0.1 mA 15 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without noti.
BUP49 - Seme LAB
BUP49 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.0.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BUP400 |
Siemens Semiconductor Group |
IGBT |
|
| 2 | BUP400D |
Siemens Semiconductor Group |
IGBT |
|
| 3 | BUP401 |
Siemens Semiconductor Group |
IGBT |
|
| 4 | BUP402 |
Siemens Semiconductor Group |
IGBT |
|
| 5 | BUP403 |
Siemens Semiconductor Group |
IGBT |
|
| 6 | BUP41 |
TT electronics |
Silicon Epitaxial Planar NPN Transistor |
|
| 7 | BUP41 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 8 | BUP410 |
Siemens Semiconductor Group |
IGBT |
|
| 9 | BUP410D |
Siemens Semiconductor Group |
IGBT |
|
| 10 | BUP06CN015E-01 |
Infineon |
60V Radiation Tolerant power MOSFET |
|
| 11 | BUP06CN035L-01 |
Infineon |
60V Radiation Tolerant power MOSFET |
|
| 12 | BUP200 |
Siemens Semiconductor Group |
IGBT |
|