The BUL381D and BUL382D are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot .
Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value 800 400 9 5 8 2 4 70 -65 to 150 150 Uni t V V V A A A A W o o C C July 1997 1/6 BUL381D / BUL382D THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.78 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat )∗ Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Collector-Emitter S.
·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUL382 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
2 | BUL381 |
STMicroelectronics |
NPN POWER TRANSISTOR | |
3 | BUL381 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | BUL381D |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
5 | BUL381D |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | BUL38D |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
7 | BUL38D |
Suntac Electronic |
NPN POWER TRANSISTORS | |
8 | BUL38D |
Inchange Semiconductor |
Silicon NPN Power Transistors | |
9 | BUL310 |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
10 | BUL310 |
SavantIC |
SILICON POWER TRANSISTOR | |
11 | BUL310FP |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
12 | BUL310FP |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |