BUK9V13-40H - nexperia

BUK9V13-40H Dual N-channel MOSFET

Dual, logic level N-channel MOSFET in an LFPAK56D package (half-bridge configuration), using Trench 9 TrenchMOS technology. This product has been designed and qualified to AEC-Q101. G1 An internal connection is made between the source (S1) of the high- side FET to the drain (D2) of the low-side FET, making the device ideal to use as a half-bridge swit.

Features

• LFPAK56D package with half-bridge configuration enables:
• Reduced PCB layout complexity
• PCB shrinkage through reduced component footprint for 3-phase motor drive
• Improved system level Rth(j-amb) due to optimized package design
• Lower parasitic inductance to support higher efficiency
• Footprint compatibility with LFPAK56D Dual package
• Advanced AEC-Q101 grade Trench 9 silicon technology:
• Low power losses, high power density
• Superior avalanche performance
• Repetitive avalanche rated
• LFPAK copper clip packaging provides high robustness and reliability
• Gull wing leads support hi.