Dual, logic level N-channel MOSFET in an LFPAK56D package, using Application Specific (ASFET) repetitive avalanche silicon technology. This product has been designed and qualified to AEC-Q101 for use in repetitive avalanche applications. 2. Features and benefits • Fully automotive qualified to AEC-Q101 at 175 °C • Repetitive Avalanche rated to 30 °C Tj rise.
• Fully automotive qualified to AEC-Q101 at 175 °C
• Repetitive Avalanche rated to 30 °C Tj rise:
• Tested to 1 Bn avalanche events
• LFPAK copper clip package technology:
• High robustness and reliability
• Gull wing leads for high manufacturability and AOI
3. Applications
• 12 V, 24 V and 48 V automotive systems
• Repetitive avalanche topologies
• Engine control
• Transmission control
• Actuator and auxiliary loads
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage 25 °C ≤ Tj ≤ 175 °C
ID
drain current
VGS = 5 V; Tmb = 25 °C; .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUK9K52-60E |
NXP Semiconductors |
Dual N-channel TrenchMOS logic level FET | |
2 | BUK9K52-60E |
nexperia |
Dual N-channel MOSFET | |
3 | BUK9K5R1-30E |
nexperia |
Dual N-channel MOSFET | |
4 | BUK9K5R6-30E |
nexperia |
Dual N-channel MOSFET | |
5 | BUK9K12-60E |
NXP Semiconductors |
Dual N-Channel MOSFET | |
6 | BUK9K12-60E |
nexperia |
Dual N-channel MOSFET | |
7 | BUK9K13-40H |
nexperia |
Dual N-channel MOSFET | |
8 | BUK9K13-60E |
nexperia |
Dual N-channel MOSFET | |
9 | BUK9K13-60RA |
nexperia |
Dual N-channel MOSFET | |
10 | BUK9K134-100E |
NXP Semiconductors |
MOSFET | |
11 | BUK9K134-100E |
nexperia |
Dual N-channel MOSFET | |
12 | BUK9K17-60E |
NXP Semiconductors |
Dual N-Channel MOSFET |