Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical app.
Allows responsive temperature monitoring due to integrated temperature sensor Electrostatically robust due to integrated protection diodes Low conduction losses due to low on-state resistance Q101 compliant Reduced component count due to integrated current sensor 1.3 Applications Automotive and general purpose power switching Fan control Electrical Power Assisted Steering (EPAS) Variable Valve Timing for engines 1.4 Quick reference data Table 1. Symbol VDS ID Quick reference Parameter drain-source voltage drain current Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BUK7C06-40AITE |
NXP Semiconductors |
N-channel TrenchMOS standard level FET | |
2 | BUK7C08-55AITE |
NXP Semiconductors |
TrenchPLUS standard level FET | |
3 | BUK7C08-75AITE |
NXP Semiconductors |
TrenchPLUS standard level FET | |
4 | BUK7105-40AIE |
NXP |
TrenchPLUS standard level FET | |
5 | BUK7105-40ATE |
NXP |
N-channel TrenchPLUS standard level FET | |
6 | BUK7107-40ATC |
NXP |
TrenchPLUS standard level FET | |
7 | BUK7107-55AIE |
NXP |
TrenchPLUS standard level FET | |
8 | BUK7108-40AIE |
NXP |
TrenchPLUS standard level FET | |
9 | BUK714R1-40BT |
NXP |
TrenchMOS standard level FET | |
10 | BUK7207-30B |
NXP Semiconductors |
TrenchMOS standard level FET | |
11 | BUK7208-40B |
NXP Semiconductors |
TrenchMOS standard level FET | |
12 | BUK7210-55B |
NXP Semiconductors |
N-Channel MOSFET |