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BU180 - INCHANGE Semiconductor

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BU180 Silicon NPN Darlington Power Transistor

·Collector Current -IC= 10A ·DC Current Gain- : hFE= 200(Min)@ IC= 5A ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated switchmode applications such as: ·Switching regulators ·Inverters ·Solenoid and relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY.

Features

B=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 20mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 20mA ICEO Collector Cutoff Current VCE= 200V; IB= 0 ICBO Collector Cutoff Current VCB= 320V;IE= 0 IEBO Emitter Cutoff Current VEB= 8V; IC=0 hFE DC Current Gain IC= 5A; VCE= 5V BU180 MIN TYP. MAX UNIT 200 V 1.5 V 2.0 V 1.0 mA 1.0 mA 10 mA 200 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our.

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