·With TO-220F package ·High voltage ·High speed switching ·Built-in damper diode. APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collect.
tage Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector output capacitance CONDITIONS IE=600mA ;IC=0 IC=100mA ;IB=0;L=25mH IC=4.5A; IB=1.1A IC=4.5A; IB=1.7A VCE=rated;VBE=0 Tj=125 VEB=7.5V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=1V IF=4.5A IE=0;f=1MHz;VCB=10V 4 140 13 5.5 1.6 80 7.0 2.0 V pF MIN 7.5 700 1.0 1.3 1.0 2.0 390 TYP. 13.5 MAX UNIT V V V V mA mA SYMBOL V(BR)EBO VCEO(SUS) VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF CC 2 Savan.
·High Voltage ·High Speed Switching ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance .
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BU1508DF |
INCHANGE |
NPN Transistor | |
2 | BU1508 |
Vishay Siliconix |
Bridge Rectifiers | |
3 | BU1508-E3 |
Vishay |
Bridge Rectifiers | |
4 | BU1508-M3 |
Vishay |
Bridge Rectifiers | |
5 | BU1508AF |
INCHANGE |
NPN Transistor | |
6 | BU1508AF |
SavantIC |
SILICON POWER TRANSISTOR | |
7 | BU1508AX |
NXP |
Silicon Diffused Power Transistor | |
8 | BU1508AX |
SavantIC |
SILICON POWER TRANSISTOR | |
9 | BU1508AX |
INCHANGE |
NPN Transistor | |
10 | BU1506 |
NXP |
Silicon Diffused Power Transistor | |
11 | BU1506 |
Vishay Siliconix |
Bridge Rectifiers | |
12 | BU1506-E3 |
Vishay |
Bridge Rectifiers |