·With TO-220 insulated packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER Max UNIT VDRM Repetitive peak .
etitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated; VD=VDRM Rated; Tj=25℃ Tj=125℃ VTM On-state voltage IGT Gate-trigger current VGT Rth (j-c) Gate-trigger voltage Junction to case IT=22.5A;tP=380μs Ⅰ Ⅱ VD =12V;RL=33Ω; Ⅲ Ⅳ VD =12V;RL=33Ω; MIN MAX UNIT 5 μA 2 mA 1.55 V 50 50 mA 50 100 1.3 V 2.1 ℃/W NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BTA16-800B |
WeEn |
4Q Triac | |
2 | BTA16-800B |
Inchange Semiconductor |
Triacs | |
3 | BTA16-800B |
STMicroelectronics |
logic level and standard 16A Triacs | |
4 | BTA16-800B |
TGS |
16A TRIACS | |
5 | BTA16-800B |
Comset Semiconductors |
TRIAC | |
6 | BTA16-800BW |
STMicroelectronics |
logic level and standard 16A Triacs | |
7 | BTA16-800BW |
TGS |
16A TRIACS | |
8 | BTA16-800BW3G |
Littelfuse |
Thyristors | |
9 | BTA16-800BW3G |
ON Semiconductor |
Triacs Silicon Bidirectional Thyristors | |
10 | BTA16-800C |
TGS |
16A TRIACS | |
11 | BTA16-800CW |
INCHANGE |
Triacs | |
12 | BTA16-800CW |
STMicroelectronics |
logic level and standard 16A Triacs |