1 T1 2 3 G - 4 T2 5 Tab Pin Polarity Circuit Diagram TOP4 (TO-4PT or TO-228) Tab 1 2 3 4 T2 (2) T1 (1) G (3) H BT A ↓↓↓ 100 - 1600 ↓↓ IT(RMS) 100A 600=600V 800=800V 1000=1000V 1200=1200V 1400=1400V 1600=1600V 1800=1800V B_ ↓↓ IGT Ⅰ-Ⅱ-Ⅲ ≤50mA Package TOP4 HAOHAI ELECTRONICS CO.,LTD. BT: Bi-directional Triode BT: A: Insulated B: Non.
ak on-state Current
IGM Peak Gate Current
I2t I2t Value for Fusing Consideration
VDRM
Repetitive peak off-state Voltages
VRRM
Repetitive peak Reverse Voltages
PG(AV)
Average gate power dissipation
Tj Operating Junction Temperature Range
Tstg Storage Junction Temperature Range
Rth(j-c)
Thermal Resistance−Junction−to−Case
Rth(j-a)
Thermal Resistance−Junction−to−Ambient
■ : ISOLATION LIMITING VALUE & CHARACTERISTIC (Ths=25 ℃ unless otherwise specified)
Test Conditions TC=80℃
TJ=25℃, f=60Hz tp=20µs, Tj=125℃ tp=10mS, Tj=25℃
TJ=25℃ TJ=25℃ Tj=25℃
TOP4
Value 100 1000
8 6400
Unit .
isc Triacs BTA100-800B FEATURES · NPNPN five-layer silicon bidirectional device · With TO-P4 packaging · Advanced tech.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BTA100-800 |
KCD |
4 Quadrants TRIACs | |
2 | BTA100-1000 |
KCD |
4 Quadrants TRIACs | |
3 | BTA100-1000B |
HAOHAI |
Specially Varieties 4Q-Triacs | |
4 | BTA100-1200 |
KCD |
4 Quadrants TRIACs | |
5 | BTA100-1200B |
HanKingyuan |
TRIACs | |
6 | BTA100-1200B |
HAOHAI |
Specially Varieties 4Q-Triacs | |
7 | BTA100-1400B |
HAOHAI |
Specially Varieties 4Q-Triacs | |
8 | BTA100-1600 |
KCD |
4 Quadrants TRIACs | |
9 | BTA100-1600B |
HanKingyuan |
TRIACs | |
10 | BTA100-1600B |
HAOHAI |
Specially Varieties 4Q-Triacs | |
11 | BTA100-1800B |
HAOHAI |
Specially Varieties 4Q-Triacs | |
12 | BTA100-600B |
HAOHAI |
Specially Varieties 4Q-Triacs |