Glass passivated, sensitive gate thyristors in a plastic envelope suitable for surface mounting, intended for use in Residual Current Devices/ Ground Fault Interrupters/ Leakage Current Circuit Breakers (RCD/ GFI/ LCCB) applications where a minimum IGT limit is needed. These devices may be interfaced directly to microcontrollers, logic integrated circuits an.
olute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tsp ≤ 112 ˚C all conduction angles t = 10 ms t = 8.3 ms half sine wave; Tj = 25 ˚C prior to surge t = 10 ms ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs -40 B 2001 MAX. D 4001 E 5001 G 6001 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current 0.63 1 8 9 0.32 50 1 5 5 2 0.1 150 125 I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state curren.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BT168 |
Philips |
Thyristors | |
2 | BT168 |
NXP |
Thyristors | |
3 | BT168E |
WeEn |
SCR | |
4 | BT168G |
WeEn |
SCR | |
5 | BT168GW |
NXP |
SCR | |
6 | BT168GWF |
NXP |
SCR | |
7 | BT160140 |
BATRON |
Graphic LCD Modules | |
8 | BT1611I |
Audiovox |
AM/FM/CD/MP3/WMA Receiver Manual | |
9 | BT162 |
Digitron |
SILICON BIDIRECTIONAL THYRISTORS | |
10 | BT162-400 |
Digitron |
SILICON BIDIRECTIONAL THYRISTORS | |
11 | BT162-600 |
Digitron |
SILICON BIDIRECTIONAL THYRISTORS | |
12 | BT169 |
NXP |
Thyristor |