Glass passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT1.
ve peak on-state current 2 CONDITIONS MIN. - MAX. -500R -600R -800R 5001 6001 800 13 20 200 220 200 200 5 5 5 20 0.5 150 125 UNIT V A A A A A2s A/µs A V V W W ˚C ˚C I2tI dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature half sine wave; Tmb ≤ 103 ˚C all conduction angles half sine wave; Tj = 125 ˚C prior to surge; with reapplied VDRM(max) t = 10 ms t = 8.3 ms.
The BT152 -500R SCR is suitable to fit modes of control found in applications such as voltage regulation circuits for mo.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BT152-500RT |
NXP |
Silicon Controlled Rectifier | |
2 | BT152-1200T |
WeEn |
SCR | |
3 | BT152-400R |
NXP |
Thyristors | |
4 | BT152-400R |
Comset Semiconductors |
THYRISTORS | |
5 | BT152-400RG |
First Semiconductor |
SCRs | |
6 | BT152-600 |
SemiWell Semiconductor |
Silicon Controlled Rectifiers | |
7 | BT152-600 |
ARK |
Thyristors | |
8 | BT152-600R |
WeEn |
SCR | |
9 | BT152-600R |
Comset Semiconductors |
THYRISTORS | |
10 | BT152-600R |
INCHANGE |
Thyristors | |
11 | BT152-600RG |
First Semiconductor |
SCRs | |
12 | BT152-800R |
NXP |
SCR |