Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. BT137 series E QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT137Repetitive peak off-state voltages RMS on-state current Non-repetitiv.
≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to .
isc Triacs INCHANGE Semiconductor BT137-600E FEATURES ·With TO-220 package ·Glass passivated triacs in a plasticenvelo.
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and.
DIP Type Thyristor TRIACS Thyristor BT137-600E ■ Features ● Repetitive peak off-state voltages :600V ● RMS on-state c.
Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in general p.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BT137-600 |
ADV |
4 Quadrants Triacs | |
2 | BT137-600 |
NXP |
4Q Triac | |
3 | BT137-600 |
KCD |
8A TRIAC | |
4 | BT137-600 |
Inchange Semiconductor |
Triacs | |
5 | BT137-600 |
UTC |
TRIAC | |
6 | BT137-600 |
BLUE ROCKET ELECTRONICS |
Triac | |
7 | BT137-600 |
Comset Semiconductors |
TRIACS | |
8 | BT137-600 |
WeEn |
4Q Triac | |
9 | BT137-600D |
NXP |
4Q Triac | |
10 | BT137-600D |
Inchange Semiconductor |
Triacs | |
11 | BT137-600F |
INCHANGE |
Triacs | |
12 | BT137-600F |
HAOPIN |
Sensitive Gate Triac |