Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT131 series QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM P.
er triggering full sine wave; Tlead ≤51 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 1 16 17.6 1.28 50 50 50 10 2 5 5 0.5 150 125 MAX. -600 6001 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage,.
isc Triacs BT131-500 FEATURES ·With TO-92 package ·Glass passivated,sensitive gate triacs in a plastic envelope ·Inten.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BT131-600 |
NXP |
4Q Triac | |
2 | BT131-600 |
WeEn |
4Q Triac | |
3 | BT131-600D |
WeEn |
4Q Triac | |
4 | BT131-600D |
Inchange Semiconductor |
Triacs | |
5 | BT131-600D |
NXP |
4Q Triac | |
6 | BT131-600E |
WeEn |
4Q Triac | |
7 | BT131-600E |
NXP |
4Q Triac | |
8 | BT131-600E |
Inchange Semiconductor |
Triacs | |
9 | BT131-600F |
Inchange Semiconductor |
Triacs | |
10 | BT131-800 |
Inchange Semiconductor |
Triacs | |
11 | BT131-800 |
WeEn |
4Q Triac | |
12 | BT131-800 |
NXP |
Triacs |