BSX52A - TT

BSX52A SILICON EPITAXIAL NPN TRANSISTOR

SILICON EPITAXIAL NPN TRANSISTOR BSX52A • Hermetic TO-18 Metal package. • Designed For Low Frequency Amplifiers, and Low Current Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 50V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Base Voltage 7V IC .

Features

melab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Document Number 9602 Website: http://www.semelab-tt.com Issue 1 Page 1 of 3 SILICON EPITAXIAL NPN TRANSISTOR BSX52A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions ICBO Collector-Cut-Off Current VCB = 50V IE = 0 TA = 100°C IEBO V(BR)CEO(1) VCE(sat)(1) VBE(sat)(1) hFE(1) Emitter-Cut-Off Current.