BSS82B - Siemens Semiconductor Group

BSS82B PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)

PNP Silicon Switching Transistors BSS 80 BSS 82 High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 79, BSS 81 (NPN) q Type BSS 80 B BSS 80 C BSS 82 B BSS 82 C Marking CHs CJs CLs CMs Ordering Code (tape and reel) Q62702-S557 Q62702-S492 Q62702-S560 Q62702-S482 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maxi.

Features

91 BSS 80 BSS 82 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 80 BSS 82 Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 50 V VCB = 50 V, TA = 150 ˚C Emitter-base cutoff current VEB = 3 V DC current gain IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 10 V1) IC = 500 mA, VCE = 10 V1) BSS 80 B/82 B BSS 80 C/82 C BSS 80 B/82 B BSS 80 C/82 C BSS 80 B/82 B BSS 80 C/82.