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SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL 7 BSS65 - L1 BSS65R - L5 BSS65 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temper.
IC=0, f=1MHz IC=-30mA IB1 = -IB2= -1.5mA VCC=-10V UNIT V V V mA mA mA mW °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). BreakdownVoltages V(BR)CEO Static Forward Current hFE Transfer Ratio Transition Frequency Collector-Base Capacitance Emitter Base Capacitance fT Cobo Cebo ton toff Switching Times Turn-On Time Turn-Off Time PAGE NUMBER .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BSS60 |
Philips |
PNP Transistoor |
|
| 2 | BSS60 |
Motorola |
DARLINGTON TRANSISTOR |
|
| 3 | BSS606N |
Infineon Technologies |
Small-Signal-Transistor |
|
| 4 | BSS60A |
Comset Semiconductors |
(BSS60A - BSS62A) SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 5 | BSS61 |
NXP |
PNP transistors |
|
| 6 | BSS61 |
Philips |
PNP Transistoor |
|
| 7 | BSS61 |
Motorola |
DARLINGTON TRANSISTOR |
|
| 8 | BSS61A |
Comset Semiconductors |
(BSS60A - BSS62A) SILICON PLANAR EPITAXIAL TRANSISTORS |
|
| 9 | BSS62 |
NXP |
PNP transistors |
|
| 10 | BSS62 |
Philips |
PNP Transistoor |
|
| 11 | BSS62 |
Motorola |
DARLINGTON TRANSISTOR |
|
| 12 | BSS62A |
Comset Semiconductors |
(BSS60A - BSS62A) SILICON PLANAR EPITAXIAL TRANSISTORS |
|