BSS284 - Siemens Semiconductor

BSS284 SIPMOS Small-Signal Transistor

BSS 284 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-1.6 V Pin 1 G Pin 2 S Pin 3 D Type BSS 284 Type BSS 284 VDS -50 V ID -0.13 A RDS(on) 10 Ω Package SOT-23 Marking SDs Ordering Code Q62702-S299 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage.

Features

stance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -50 -1.2 -0.1 -2 -1 5 -1.6 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -60 -0.1 µA VDS = -50 V, VGS = 0 V, Tj = 25 °C VDS = -50 V, VGS = 0 V, Tj = 125 °C VDS = -25 V, VGS = 0 V, Tj = 25 °C Gate-source leakage current IGSS -10 nA Ω 10 VGS = -20 V, VDS = 0 V Drain-Source on-s.