BSS138PW - nexperia

BSS138PW N-channel MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ Low-side load.

Features

„ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ Low-side loadswitch „ Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID Quick reference data Parameter drain-source voltage gate-source voltage drain current RDSon drain-source on-state resistance Conditions Tamb = 25 °C Tamb = 25 °C Tamb = 25 °C; VGS = 10 V Tj = 25 °C; VGS = 10 V; ID = 300 mA Min Typ Max Unit - - 60 V - - ±20 V [1] - - 320 mA [2] - 0.9 1.6 Ω [1] Device mounted on an FR4 Printed-Circuit Board (.