BSS138K - ON Semiconductor

BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor

N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138K Features • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra−Small Surface Mount Package • Green Compound • ESD HBM = 2000 V as per JEDEC A114A; ESD CDM = 2000 V as per JEDEC C101C • This Device is Pb−Free an.

Features

• Low On−Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra−Small Surface Mount Package
• Green Compound
• ESD HBM = 2000 V as per JEDEC A114A; ESD CDM = 2000 V as per JEDEC C101C
• This Device is Pb−Free and is RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) (Note 1) Symbol Parameter Value Unit VDSS VGSS ID Drain−Source Voltage Gate−Source Voltage Drain Current
  – Continuous Drain Current
  – Pulsed 50 V ±12 V 0.22 A 0.88 PD Total Device Dissipation 350 mV Derating above TA = 25°C .