It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications Absolute Max Rating: Symbol ID @ TC =.
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute Max Rating:
Symbol ID .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSS138 |
Fairchild Semiconductor |
N-Channel MOSFET | |
2 | BSS138 |
ON Semiconductor |
N-Channel MOSFET | |
3 | BSS138 |
MCC |
N-Channel MOSFET | |
4 | BSS138 |
National Semiconductor |
N-Channel MOSFET | |
5 | BSS138 |
TAITRON |
SMD Power MOSFET Transistor | |
6 | BSS138 |
UTC |
N-CHANNEL MOSFET | |
7 | BSS138 |
Diodes |
N-Channel MOSFET | |
8 | BSS138 |
LITE-ON |
N-Channel 50V MOSFET | |
9 | BSS138-7-F |
Multicomp |
N-Channel MOSFET | |
10 | BSS138-G |
Comchip |
MOSFET | |
11 | BSS138A |
MCC |
N-Channel MOSFET | |
12 | BSS138AKA |
NXP |
single N-channel MOSFET |