SMD Type Transistors PNP Medium Power Transistors BSR30,BSR31,BSR33 Features High current (max. 1 A) Low voltage (max. 80 V). SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 +0.10.40 -0.1 3.00+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Para.
High current (max. 1 A) Low voltage (max. 80 V). SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1 +0.10.80 -0.1 +0.12.60 -0.1 +0.10.40 -0.1 3.00+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage BSR30,BSR31 BSR33 Collector-emitter voltage BSR30,BSR31 BSR33 Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to amb.
DESCRIPTION PNP medium power transistor in a SOT89 plastic package. NPN complements: BSR40; BSR41 and BSR43. 3 2 1 M.
PNP Medium power transistors FEATURES z High current.(max.1A). z Low voltage(max.80V). Pb Lead-free APPLICATIONS z Th.
PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High cu.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSR302N |
Infineon Technologies |
Small-Signal-Transistor | |
2 | BSR31 |
NXP |
PNP medium power transistors | |
3 | BSR31 |
GME |
PNP Medium power transistors | |
4 | BSR31 |
STMicroelectronics |
SMALL SIGNAL PNP TRANSISTORS | |
5 | BSR31 |
Kexin |
PNP Transistor | |
6 | BSR315P |
Infineon Technologies |
Small-Signal-Transistor | |
7 | BSR316P |
Infineon Technologies |
Small-Signal-Transistor | |
8 | BSR33 |
NXP |
PNP medium power transistors | |
9 | BSR33 |
GME |
PNP Medium power transistors | |
10 | BSR33 |
STMicroelectronics |
SMALL SIGNAL PNP TRANSISTORS | |
11 | BSR33 |
Diodes |
PNP Transistor | |
12 | BSR33 |
Kexin |
PNP Transistor |