NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP60 - BSP62 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BSP50-BSP52 43 2 1 Type BSP50 BSP51 BSP52 Marking BSP50 1=B BSP51 1=B BSP52 1=B Pin Configuration 2=C 3=E 4=C 2=C 3=E 4=C 2=C 3=E 4=C - - Pack.
n. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BSP50 IC = 10 mA, IB = 0 , BSP51 IC = 10 mA, IB = 0 , BSP52 V(BR)CEO 45 60 80 - - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BSP50 IC = 100 µA, IE = 0 , BSP51 IC = 100 µA, IE = 0 , BSP52 V(BR)CBO 60 80 90 - - Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-emitter cutoff current VCE = VCE0max, VBE = 0 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain2) IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V Collector-emitter saturation voltage2) IC = 500 mA, IB = 0..
base collector emitter 4 2, 4 DESCRIPTION NPN Darlington transistor in a SOT223 plastic package. PNP complements: BSP6.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BSP50 |
NXP |
NPN Darlington transistors | |
2 | BSP50 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors | |
3 | BSP50 |
nexperia |
NPN Darlington transistor | |
4 | BSP50 |
Fairchild Semiconductor |
NPN Darlington Transistor | |
5 | BSP52 |
Fairchild Semiconductor |
NPN Darlington Transistor | |
6 | BSP52 |
NXP |
NPN Darlington transistors | |
7 | BSP52 |
Infineon Technologies AG |
NPN Silicon Darlington Transistors | |
8 | BSP52T1 |
Motorola Inc |
MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT | |
9 | BSP52T1 |
ON Semiconductor |
MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT | |
10 | BSP52T1G |
ON Semiconductor |
NPN Small-Signal Darlington Transistor | |
11 | BSP52T3 |
ON Semiconductor |
(BSP52T1 / BSP52T3) NPN Small-Signal Darlington Transistor | |
12 | BSP52T3G |
ON Semiconductor |
NPN Small-Signal Darlington Transistor |