BSP43 - STMicroelectronics

BSP43 MEDIUM POWER AMPLIFIER

BSP40/41 BSP42/43 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE PNP COMPLEMENTS ARE BSP30, BSP31, BSP32 AND BSP33 RESPECTIVELY 2 .

Features

Max Max 62.5 8 o o C/W C/W
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 60 V V CB = 60 V T j = 150 C 70 90 60 80 70 90 5 o Min. Typ. Max. 100 50 Unit nA µA V V V V V V V I C = 100 µ A for BSP40/BSP41 for BSP42/BSP43 I C = 10 mA for BSP40/BSP41 for BSP42/BSP43 I C = 10 µ A for BSP40/BSP41 for BSP42/BSP43 I C = 10 µ A V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = .