BSC205N10LSG - Infineon Technologies

BSC205N10LSG Power-Transistor

BSC205N10LS G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 20.5 45 V mΩ A www.Da.

Features

• N-channel, logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max ID PG-TDSON-8 100 20.5 45 V mΩ A www.DataSheet4U.com
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21 Type BSC205N10LS G Package PG-TDSON-8 Marking 205N10LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditio.