BS250CSM4 MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL ENHANCEMENT MODE IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS 3.81 ± 0.13 (0.15 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 1.27 ± 0.05 (0.05 ± 0.002) 5.59 ± 0.13 (0.22 ± 0.005) 3 2 4 1 1.40 ± 0.15 (0.055 ± 0.006) 0.25 ± 0.03 (0.01 ± 0.001) 0.23 (0.009) rad. 0.23 (0.009) m 1.
• VDSS = 45V
• ID = 0.18A
• rdson = 14 ohms
• Hermetic Surface Mount Package
• Screening Option Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VDS
Drain
– Source Voltage
VGS
Gate
– Source Voltage
ID
Continuous Drain Current
@TA = 25°C
@TA = 100°C
IDM
Pulsed Drain Current
PD
Power Dissipation
@TA = 25°C
@TA = 100°C
TSTG , TJ Maximum Junction and Storage Temperature Range
45V "30V 0.15A 0.095A 0.69A 0.83W 0.32W 150°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected] Website: http://www.semelab.co.uk
Prelim. 3/0.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BS250 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
2 | BS250 |
Diodes Incorporated |
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR | |
3 | BS250 |
General Semiconductor |
DMOS Transistors (P-Channel) | |
4 | BS250 |
Vishay Siliconix |
P-Channel 60-V (D-S) MOSFET | |
5 | BS250F |
Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
6 | BS250KL |
Vishay |
P-Channel MOSFET | |
7 | BS250P |
Zetex Semiconductors |
P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | |
8 | BS2540-7R |
Power-One |
100 Watt DC-DC Converters | |
9 | BS200 |
Yamato |
Water Bath Instruction Manual | |
10 | BS204 |
EEV |
S-Band TR Tube | |
11 | BS208 |
NXP |
P-channel enhancement mode vertical D-MOS transistor | |
12 | BS208 |
Diodes Incorporated |
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR |