Silicon planar PNPN switch in a SOT143B plastic package. It is an integrated PNP/NPN transistor pair, with all electrodes accessible. APPLICATIONS • Switching applications. MARKING TYPE NUMBER BRY62 MARKING CODE A51 1 Top view 2 MSB014 BRY62 PINNING PIN 1 2 3 4 anode gate anode cathode cathode gate DESCRIPTION handbook, 2 columns 4 3 a ag kg k MBB068 Fi.
open collector tp = 10 µs; δ = 0.01 open emitter RBE = 10 kΩ open collector note 1 note 2 − − − − − − − − − − − − 70 70 5 175 175 −175 −2.5 −70 −70 −70 175 2.5 V V V mA mA mA A PARAMETER CONDITIONS MIN. MAX. UNIT PNP transistor collector-base voltage collector-emitter voltage emitter-base voltage emitter current (DC) repetitive peak emitter current V V V mA A 1999 Apr 22 2 Philips Semiconductors Product specification Silicon controlled switch BRY62 SYMBOL Combined device Ptot Tstg Tj Tamb Notes PARAMETER CONDITIONS Tamb ≤ 25 °C − MIN. MAX. UNIT total power dissipation storage tem.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BRY61 |
NXP |
Programmable unijunction transistor | |
2 | BRY61 |
NXP |
Programmable unijunction transistor | |
3 | BRY20 |
Siemens Semiconductor Group |
PNP THYRISTOR TETRODE | |
4 | BRY39 |
NXP |
Programmable unijunction transistor/ Silicon controlled switch | |
5 | BRY39T |
Philips |
THYRISTOR TETRODE | |
6 | BRY55 |
Motorola Inc |
SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS | |
7 | BRY55 |
M&G Electronic |
TIRISTORI | |
8 | BRY55-100 |
Motorola Inc |
SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS | |
9 | BRY55-100 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIER | |
10 | BRY55-200 |
Motorola Inc |
SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS | |
11 | BRY55-200 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIER | |
12 | BRY55-30 |
Motorola Inc |
SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS |