Planar PNPN trigger device in a TO-92; SOT54 plastic package. APPLICATIONS • Switching applications such as: – Motor control – Oscillators – Relay replacement – Timers – Pulse shapers, etc. MSB033 handbook, halfpage BRY56A PINNING PIN 1 2 3 gate anode cathode DESCRIPTION anode a g gate book, halfpage 1 2 3 k cathode MGL167 Fig.1 Simplified outline (.
°C non-repetitive peak anode current tp = 10 µs CONDITIONS − − − − − − −65 − −65 MIN. MAX. 70 175 2.5 3 20 300 +150 150 +150 V mA A A A/µs mW °C °C °C UNIT 1999 May 31 2 Philips Semiconductors Product specification Programmable unijunction transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE 250 BRY56A UNIT K/W thermal resistance from junction to ambient in free air CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL IP IV Voffset IGAO IGKS VAK VOM tr PARAMETER peak point current valley point current offset voltage gate-anode leakage current anode-cat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BRY56 |
Siemens Semiconductor Group |
PROGRAMMABLE UNIJUNCTION TRANSISTOR | |
2 | BRY56B |
Siemens Semiconductor Group |
PROGRAMMABLE UNIJUNCTION TRANSISTOR | |
3 | BRY56C |
Siemens Semiconductor Group |
PROGRAMMABLE UNIJUNCTION TRANSISTOR | |
4 | BRY55 |
Motorola Inc |
SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS | |
5 | BRY55 |
M&G Electronic |
TIRISTORI | |
6 | BRY55-100 |
Motorola Inc |
SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS | |
7 | BRY55-100 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIER | |
8 | BRY55-200 |
Motorola Inc |
SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS | |
9 | BRY55-200 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIER | |
10 | BRY55-30 |
Motorola Inc |
SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS | |
11 | BRY55-30 |
Digitron Semiconductors |
SILICON CONTROLLED RECTIFIER | |
12 | BRY55-400 |
Motorola Inc |
SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS |