A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current together with high peak current handling capability. Their intended application is protection of line based telecommunications equipment against voltage transients. QUICK REFERENCE DATA.
RS212-220 BRS212-240 BRS212-260 BRS212-280 5/310 µs impulse equivalent to 10/700 µs, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 ˚C prior to surge tp = 10 ms tp = 10 µs MIN. - 40 MAX. 105 120 135 150 165 180 195 210 40 15 1.1 50 4 50 150 150 260 UNIT V V V V V V V V A A A2s A/µs W W ˚C ˚C ˚C IPP ITSM I2t dIT/dt Ptot PTM Tstg Tj TL Non-repetitive peak pulse current Non repetitive surge peak on-state current I2t for fusing Rate of rise of on-state current after V(BO) turn-on Continuous dissipation on Tsp = 50˚C infinite heatsink Peak dissipation tp = 1 ms; Ta = 25˚C .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BRS212-140 |
NXP |
Breakover diodes | |
2 | BRS212-160 |
NXP |
Breakover diodes | |
3 | BRS212-200 |
NXP |
Breakover diodes | |
4 | BRS212-220 |
NXP |
Breakover diodes | |
5 | BRS212-240 |
NXP |
Breakover diodes | |
6 | BRS212-260 |
NXP |
Breakover diodes | |
7 | BRS212-280 |
NXP |
Breakover diodes | |
8 | BRS212 |
NXP |
Breakover diodes | |
9 | BRS2B |
Agere Systems |
Quad Differential Receivers | |
10 | BRS1N60 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
11 | BRS1N70 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
12 | BRS1N80 |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET |