Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value – 40 ... + 85 32 150 Einheit Unit °C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = .
q Especially suitable for applications of 950 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 FS/(E9087); suitable for vaporphase and IR-reflow soldering Applications q IR remote control of hi-fi and TV sets, video tape recorders, remote controls of various equipment q Photointerrupters Rundfunkgeräten, Videorecordern, Gerätefernsteuerungen q Lichtschranken für Gleich- und Wechsellichtbetrieb Semiconductor Group 1 1998-08-27 BPW 34 F, BPW 34 FS BPW 34 FS (E9087) Chip position 0...0.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 6.7 6.2 4.5 4.3 1.8 ±0.2 0..
Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 BPW 34 F BPW 34 F DIL Silicon PIN Photodiode with Daylight Blocking Fil.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BPW34 |
Siemens Semiconductor Group |
Silicon PIN Photodiode | |
2 | BPW34 |
OSRAM |
Silicon PIN Photodiode | |
3 | BPW34 |
Vishay |
Silicon PIN Photodiode | |
4 | BPW34B |
Siemens Semiconductor Group |
Silicon PIN Photodiode | |
5 | BPW34B |
OSRAM |
Silicon PIN Photodiode | |
6 | BPW34BS |
OSRAM |
Silicon PIN Photodiode | |
7 | BPW34FA |
Siemens Semiconductor Group |
Silicon PIN Photodiode | |
8 | BPW34FA |
OSRAM |
Silicon PIN Photodiode | |
9 | BPW34FAS |
Siemens Semiconductor Group |
Silicon PIN Photodiode | |
10 | BPW34FAS |
OSRAM |
Silicon PIN Photodiode | |
11 | BPW34FASR |
OSRAM |
Silicon PIN Photodiode | |
12 | BPW34FS |
Siemens Semiconductor Group |
Silicon PIN Photodiode |