BN10 - ETC

BN10 GLASS PASSIVATED SILICON DAMPING DIODE

BN10(2CN3,BZU1) GLASS PASSIVATED SILICON DAMPING DIODE Features: 1. Silicon diffusion mesa. 2. Glass Passivated package. 3. Small volume, light weight. 4. Small high-temperature leakage. 5. Good thermal stability. 6. High reliability. 7. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Use for Store temperature Quality Class Peak Repet.

Features

1. Silicon diffusion mesa. 2. Glass Passivated package. 3. Small volume, light weight. 4. Small high-temperature leakage. 5. Good thermal stability. 6. High reliability. 7. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Use for Store temperature Quality Class Peak Repetitive Reverse Voltage Average Forward Current Peak Forward Voltage Average Forward Voltage Non-repeat Forward Surge Current Peak Reverse Current Peak Reverse Current Junction Temperature Reverse Recovery Time Symbols Unit T °C VRRM IF(AV) VFM VF IFSM IRM1 IRM2 Tjm trr V A V V A uA uA °C uS (Ta = 25°.