BMS3003 - ON Semiconductor

BMS3003 P-Channel Power MOSFET

Ordering number : ENA1907B BMS3003 P-Channel Power MOSFET –60V, –78A, 6.5mΩ, TO-220F-3SG http://onsemi.com Features • ON-resistance RDS(on)1=5.0mΩ (typ.) • Input capacitance Ciss=13200pF (typ.) • -4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current.

Features

• ON-resistance RDS(on)1=5.0mΩ (typ.)
• Input capacitance Ciss=13200pF (typ.)
• -4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse)
*1 EAS Avalanche Current
*2 IAV Note :
*1 VDD=--36V, L=100μH, IAV=--60A (Fig.1)
*2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --78 --312 2.0 40 150 --55 to +150 420 --60 .