BOOKLY MICRO BM3407 P-Channel 30V (D-S) 4A P-MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.070@ VGS = –4.5 V –30 0.050@ VGS = –10 V ID (A) –3 –4.1 T (SOT-23) G1 S2 3D Top View Si2307DS (A7)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain .
OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea Diode Forward Voltage
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance
Switchingb
Turn-On Time
Turn-Off Time
Symbol
Test Conditions
V(BR)DSS VGS(th)
IGSS
IDSS ID(on)
rDS(on)
gfs VSD
Qg Qgs Qgd Ciss Coss Crss
td(on) tr
td(off) tf
VGS = 0 V, ID =
–10 mA VDS = VGS, ID =
–250 mA VDS = 0 V, VGS = "20 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BM3401 |
Bookly |
P-Channel MOSFET | |
2 | BM3406 |
Bookly |
N-Channel MOSFET | |
3 | BM34063 |
ETC |
DC-DC CONVERTER | |
4 | BM34063A |
Yuxiangda |
DC-DC CONVERTER | |
5 | BM3414 |
BOOKLY |
Single-Supply Dual High Current Operational/Audio Amplifier | |
6 | BM3451 |
BYD Microelectronics |
3/4/5 Cell Battery Protectors | |
7 | BM30-12 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR | |
8 | BM3020-7 |
Power-One |
50 Watt DC-DC Converters | |
9 | BM3040-7 |
Power-One |
50 Watt DC-DC Converters | |
10 | BM3103 |
ETC |
Three-cell Battery Protectors | |
11 | BM3103-TNDB |
ETC |
Three-cell Battery Protectors | |
12 | BM3109IB |
Beijing Microelectronics |
System on a Programmable Chip |