BLU11SL - Philips

BLU11SL UHF power transistor

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile transmitters in the 470 MHz band. FEATURES • multi-base structure and emitter-ballasting resistors for an optimum temperature profile. • gold metallization ensures excellent reliability. • the device can be applied at a PL of max. 1,5 W when it is mounted on a printed wiring board.

Features

• multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
• gold metallization ensures excellent reliability.
• the device can be applied at a PL of max. 1,5 W when it is mounted on a printed wiring board (see Fig.6) without an external heatsink. The transistor has a 4-lead envelope with a ceramic cap (SOT-122D). All leads are isolated from the mounting base. QUICK REFERENCE DATA R.F. performance in a common-emitter class-B circuit. MODE OF OPERATION narrow band; c.w. T °C Tmb = 25 Ta = Note 1. Device mounted on a printed wiring board (see Fig.6). PIN CONFIGUR.