A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications. Table 1. Test information RF performance at Tcase = 25 C .
.
A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF882 |
Ampleon |
Power LDMOS transistor | |
2 | BLF882 |
NXP Semiconductors |
UHF power LDMOS transistor | |
3 | BLF881 |
Ampleon |
Power LDMOS transistor | |
4 | BLF881 |
NXP |
UHF Power LDMOS Transistor | |
5 | BLF881S |
Ampleon |
Power LDMOS transistor | |
6 | BLF881S |
NXP |
UHF Power LDMOS Transistor | |
7 | BLF884P |
Ampleon |
Power LDMOS transistor | |
8 | BLF884P |
NXP Semiconductors |
UHF power LDMOS transistor | |
9 | BLF884PS |
Ampleon |
Power LDMOS transistor | |
10 | BLF884PS |
NXP Semiconductors |
UHF power LDMOS transistor | |
11 | BLF888 |
NXP |
UHF Power LDMOS Transistor | |
12 | BLF888A |
Ampleon |
Power LDMOS transistor |