BLF879P - NXP Semiconductors

BLF879P UHF power LDMOS transistor

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 42 V unless otherwise specified. Mode of operation f PL(AV) PL(M) Gp D IMD3 IMDshldr (MHz).

Features

 Excellent ruggedness
 Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
 High power gain
 High efficiency
 Designed for broadband operation (470 MHz to 860 MHz)
 Internal input matching for high gain and optimum broadband operation
 Excellent reliability
 Easy power control
 Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3 Applications
 Communication transmitter applications in the UHF band
 Industrial applications in the UHF band NXP Semiconductors BLF879P; BLF879PS UHF power LDMOS transistor 2. Pinning information Table 2. Pinning .