100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] [1] [2] f (MHz) 3400 to 3600 VDS PL(AV) (V) 28 (W) 18.5 PL(p) Gp (W) 130 13 ηD ACPR885k (dBc) ACPR1980k (dB.
I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz and 3600 MHz, a supply voltage of 28 V and an IDq of 1050 mA: I Qualified up to a maximum VDS operation of 32 V I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation I Internally matched for ease of use I Low gold plating thickness on leads I Compliant to Directive 2002/95/E.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BLF6G38-10 |
Ampleon |
Power LDMOS transistor | |
2 | BLF6G38-10 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
3 | BLF6G38-10G |
Ampleon |
Power LDMOS transistor | |
4 | BLF6G38-10G |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
5 | BLF6G38-25 |
Ampleon |
Power LDMOS transistor | |
6 | BLF6G38-25 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
7 | BLF6G38-50 |
Ampleon |
Power LDMOS transistor | |
8 | BLF6G38-50 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
9 | BLF6G38LS-100 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
10 | BLF6G38LS-50 |
Ampleon |
Power LDMOS transistor | |
11 | BLF6G38LS-50 |
NXP Semiconductors |
WiMAX power LDMOS transistor | |
12 | BLF6G38S-25 |
Ampleon |
Power LDMOS transistor |