Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General Section of Data Handbook SC19a for further information. CAUTION Th.
• High power gain
• Easy power control
• Good thermal stability
• Gold metallization ensures excellent reliability. APPLICATIONS
• Linear amplifier applications in Television transmitters and transposers. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General Section of Data Handbook SC19a for further information. CAUTION The device is supplied in.
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---|---|---|---|---|
1 | BLF348 |
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2 | BLF368 |
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3 | BLF369 |
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4 | BLF378 |
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5 | BLF0810-180 |
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8 | BLF0810S-90 |
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9 | BLF082 |
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