Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits Internally matched to 50 A gain of 30.0 dB at 2150 MHz Output power at 1 dB gain compression = 4 dBm at 2150 MHz Supply current = 19.9 mA at a supply voltage of 3.3 V Reverse is.
Internally matched to 50
A gain of 30.0 dB at 2150 MHz
Output power at 1 dB gain compression = 4 dBm at 2150 MHz
Supply current = 19.9 mA at a supply voltage of 3.3 V
Reverse isolation > 36 dB up to 2150 MHz
Good linearity with low second order and third order products
Noise figure = 3.3 dB at 950 MHz
Unconditionally stable (K > 1)
No output inductor required
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
Table 1. Pin 1 2, 5 3 4 6
Pinning Description VCC GND2 RF_OUT GND1 R.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BGA2815 |
NXP |
MMIC Wideband Amplifier | |
2 | BGA2817 |
NXP |
MMIC wideband amplifier | |
3 | BGA2800 |
NXP |
MMIC Wideband Amplifier | |
4 | BGA2801 |
NXP Semiconductors |
MMIC wideband amplifier | |
5 | BGA2803 |
NXP |
MMIC wideband amplifier | |
6 | BGA2850 |
NXP Semiconductors |
MMIC wideband amplifier | |
7 | BGA2851 |
NXP |
MMIC wideband amplifier | |
8 | BGA2865 |
NXP |
MMIC Wideband Amplifier | |
9 | BGA2866 |
NXP |
MMIC Wideband Amplifier | |
10 | BGA2867 |
NXP |
MMIC wideband amplifier | |
11 | BGA2869 |
NXP |
MMIC wideband amplifier | |
12 | BGA2870 |
NXP Semiconductors |
MMIC wideband amplifier |