BFX38,39,40,41 CASE 79, STYLE 1 TO-39 (TO-205AD) HIGH CURRENT TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @Ta = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature.
0 Collector Cutoff Current (VcB = 40 V) (VcB = 50 V) (VcB = 40 V, TA = 125°C) (VCB = 50 V, Ta = 125°C) ON CHARACTERISTICS BFX38-39 BFX40-41 BFX38-39 BFX40-41 ICBO Collector-Emitter Saturation Voltage (IC = 150 mA, Ib = 15 mA)(1) dC = 500 mA, Ib = 50 mA)(1) DC Current Gain dC = 100 uA, VcE = 5 V)(1) BFX38-40 BFX39-41 dC = 100 mA, Vce = 5 V)(1) BFX38-40 BFX39-41 (IC = 500 mA, Vce = 5 V)(1) BFX38-40 BFX39-41 dc = 1 a, vce = 5 VXD BFX38 BFX39 BFX40 BFX41 Emitter-Base Saturation Voltage dC = 150 mA, Ib = 15 mA)(1) dC = 500 mA, Ib = 15 mA)(1) DC Current Gain dC = 100 mA, Vce 5 V, TA =.
The BFX38-41 are Silicon Planar Epitaxial PNP transitors in Jedec TO39 metal case, designed for a wide variety of applic.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BFX40 |
Seme LAB |
PNP SILICON EPITAXIAL TRANSISTOR | |
2 | BFX40 |
Motorola |
HIGH CURRENT TRANSISTOR | |
3 | BFX40 |
SGS-ATES |
PNP Transistor | |
4 | BFX48 |
Seme LAB |
PNP SILICON EPITAXIAL TRANSISTOR | |
5 | BFX48 |
SGS-ATES |
PNP Transistor | |
6 | BFX48 |
STMicroelectronics |
High Frequency Amplifier | |
7 | BFX48 |
Motorola |
SWITCHING TRANSISTOR | |
8 | BFX11 |
SGS-ATES |
PNP Transistor | |
9 | BFX11 |
Motorola |
DUAL AMPLIFIER TRANSISTOR | |
10 | BFX15 |
SGS-ATES |
Dual NPN Transistor | |
11 | BFX15 |
Motorola |
DUAL AMPLIFIER TRANSISTOR | |
12 | BFX16 |
SGS-ATES |
Three NPN Transistor |