BFQ68 - NXP

BFQ68 NPN 4 GHz wideband transistor

NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features very high output voltage capabilities. It is primarily in.

Features

very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT Vo PARAMETER collector-emitter voltage collector current total power dissipation transition frequency output voltage up to Tc = 110 °C IC = 240 mA; VCE = 15 V; f = 500 MHz; Tj = 25 °C Ic = 240 mA; VCE = 15 V; dim = −60 dB; RL = 75 Ω; f(p+q−r) = 793.25 MHz; Tamb = 25 °C Ic = 240 mA; VCE = 15 V; RL = 75 Ω; f = 800 MHz; Tamb = 25 °C Ic = 240 mA; VCE = 15 V; RL = 75 Ω; f = 800 MHz; .