BFD63 - Seme LAB

BFD63 4TH GENERATION MOSFET

SEME LAB TO–3 (TO–204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) BFD63 4TH GENERATION MOSFET N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043.

Features

rwise stated) BVDSS Characteristic Drain
  – Source Breakdown Voltage Test Conditions m VGS = 0V , ID = 250 A IDSS IGSS VGS(TH) Zero Gate Voltage Drain Current (VGS = 0V) Gate
  – Source Leakage Current Gate Threshold Voltage VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA ID(ON) RDS(ON) On State Drain Current 2 Drain
  – Source On State Resistance 2 VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. m 2) Pulse Test: Pulse Width < 380 S , Duty Cycle < 2% Min. 100.