BFC61 - Seme LAB

BFC61 4TH GENERATION MOSFET

SEME LAB TO220–AC Package Outline. Dimensions in mm (inches) 10.67 (0.420) 9.65 (0.380) 5.33 (0.210) 2 4.83 (0.190) 4.83 (0.190) 3.56 (0.140) 1.40 (0.020) 0.51 (0.055) 3.05 (0.120) 2.54 (1.000) 3.73 (0.147) 3.53 (0.139) Dia. BFC61 4TH GENERATION MOSFET N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 16.51 (0.650) 14.22 (0.560) 6.86 (0.270) 5.

Features

1000 V 3.6 A 14.4 A ±30 V 125 W
  –55 to 150 °C 300 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) BVDSS Characteristic Drain
  – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250µA ID(ON) RDS(ON) On State Drain Current 2 Drain
  – Source On State Resistance 2 VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS =10V , ID = 0.5 ID [Cont.] IDSS IGSS VGS(TH) Zero Gate Voltage Drain Current (VGS = 0V) Gate
  – Source Leakage Current Gate Threshold Voltage VDS = VDSS VDS = 0.8VDSS , TC = 125°C VGS = ±30V , VDS = 0V VDS = VGS , ID = 1.0mA 1) Repetitive Rating: Pulse .