BF493S High Voltage Transistor PNP Silicon Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above = 25°C Symbol VCEO VCBO VEBO IC PD Value −350 −350 −6.0 −500 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C.
• This is a Pb−Free Device
*
MAXIMUM RATINGS Rating
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above = 25°C
Symbol VCEO VCBO VEBO
IC PD
Value −350 −350 −6.0 −500 625 5.0
Unit Vdc
Vdc Vdc
mAdc
mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD 1.5 W 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junc.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BF493S/D High Voltage Transistor PNP Silicon COLLECTOR 3.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BF493 |
RECTRON |
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS | |
2 | BF493 |
Motorola |
HIGH VOLTAGE TRANSISTORS | |
3 | BF493 |
Micro Electronics |
PNP SILICON HIGH VOLTAGE TRANSISTORS | |
4 | BF491 |
RECTRON |
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS | |
5 | BF491 |
Motorola |
HIGH VOLTAGE TRANSISTORS | |
6 | BF491 |
Micro Electronics |
PNP SILICON HIGH VOLTAGE TRANSISTORS | |
7 | BF492 |
RECTRON |
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS | |
8 | BF492 |
Motorola |
HIGH VOLTAGE TRANSISTORS | |
9 | BF492 |
Micro Electronics |
PNP SILICON HIGH VOLTAGE TRANSISTORS | |
10 | BF494 |
Motorola |
SILICON TRANSISTOR | |
11 | BF494 |
NXP |
NPN medium frequency transistors | |
12 | BF494 |
Micro Electronics |
NPN SILICON RF SMALL SIGNAL TRANSISTOR |