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·Continuous Collector Current-IC= 4A ·Collector Power Dissipation- : PC= 29W @TC= 25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for accordance with the requirements of BS, CECC and JAN,JANTX, JANTXV and JANS specifications。 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO .
icon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 4V ICEO Collector Cutoff Current ICEV Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 30V; IB= 0 VCE= 90V; VBE(off)= 1.5V VCE= 30V; VBE(off)= 1.5V,TC=150℃ VEB= 7V; IC= 0 hFE DC Current Gain IC= 0.5A ; VCE= 4V fT Current Gai.
BDY71X - Seme LAB
BDY71X Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340).
BDY71X - TT
SILICON PLANAR EPITAXIAL NPN TRANSISTOR BDY71X • High Power • Hermetic TO-66 Metal Package • Ideally suited for Switchi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | BDY71 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | BDY71 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | BDY72 |
Seme LAB |
Bipolar NPN Device |
|
| 4 | BDY72 |
INCHANGE |
NPN Transistor |
|
| 5 | BDY73 |
Seme LAB |
Bipolar NPN Device |
|
| 6 | BDY73 |
INCHANGE |
NPN Transistor |
|
| 7 | BDY74 |
INCHANGE |
NPN Transistor |
|
| 8 | BDY75 |
INCHANGE |
NPN Transistor |
|
| 9 | BDY76 |
INCHANGE |
NPN Transistor |
|
| 10 | BDY77 |
Semelab |
Bipolar NPN Device |
|
| 11 | BDY77 |
INCHANGE |
NPN Transistor |
|
| 12 | BDY78 |
INCHANGE |
NPN Transistor |
|