·Collector Current -IC= -16A ·High DC Current Gain-hFE= 1000(Min)@ IC= -10A ·Complement to Type BDX67/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX66 -80.
i.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDX66/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDX66 -60 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX66A BDX66B IC= -50mA ;IB=0 -80 -100 V BDX66C -120 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA -2 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -3V -2.5 V VECF C-E Diode Forward Voltage IF= -10A -2 V ICEO Collector Cutoff Current VCE= 1/2VCEOmax; IB= 0 -1 mA BDX66 VCB= .
BDX66 – A – B – C PNP SILICON DARLINGTON POWER TRANSISTOR The BDX66, BDX66A, BDX66B and BDX66C are mounted in TO-3 meta.
·With TO-3 package ·High current ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching applications. .
PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Fr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BDX66 |
Seme LAB |
Bipolar PNP Device | |
2 | BDX66 |
INCHANGE |
PNP Transistor | |
3 | BDX66 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | BDX66 |
TT |
PNP DARLINGTON SILICON POWER TRANSISTOR | |
5 | BDX66 |
Comset Semiconductors |
PNP SILICON DARLINGTONS POWER TRANSISTOR | |
6 | BDX66A |
INCHANGE |
PNP Transistor | |
7 | BDX66A |
TT |
PNP DARLINGTON SILICON POWER TRANSISTOR | |
8 | BDX66A |
Comset Semiconductors |
PNP SILICON DARLINGTONS POWER TRANSISTOR | |
9 | BDX66C |
INCHANGE |
PNP Transistor | |
10 | BDX66C |
TT |
PNP DARLINGTON SILICON POWER TRANSISTOR | |
11 | BDX66C |
Seme LAB |
Bipolar PNP Device | |
12 | BDX66C |
SavantIC |
SILICON POWER TRANSISTOR |