BDX35 SILICON PLANAR EPITAXIAL POWER TRANSISTOR Datasheet

BDX35 SILICON PLANAR EPITAXIAL POWER TRANSISTOR

NPN BDX35 – BDX36 – BDX37 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BDX35, BDX36 and BDX37 are NPN transistors mounted in Jedec TO-126 plastic package. They are intented for use in high current switching applications and switching regulator circuits. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage Ratings BDX35 BDX36.

Features

aSheet4U.co.kr/ NPN BDX35
– BDX36
– BDX37 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB=80 V IE=0 , VCB=100 V IE=0 , VCB=100 V IE=0 , VCB=80 V Tj = 100°C IE=0 , VCB=100 V Tj = 100°C IE=0 , VCB=100 V Tj = 100°C IC=0, VEB=4 V BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 BDX36 BDX35 BDX36 BDX37 BDX35 BDX37 BDX36 BDX35 BDX36 BDX37 BDX35 BDX36 BDX37 Min 45 Typ 130 Max 10 10 10 50 50 50 10 10 10 1 1 1 0,9 0,7 0,9 1,2 1,2 1,5 1 ,6 2,0 2,0 2,5 450 - Unit ICBO Collector cut-o.

The same part from a different manufacturer

BDX35 - SavantIC

·With TO-126 package ·High current (Max: 5A) APPLICATIONS ·High current switching in power applications PINNING PIN 1 2 .

BDX35 - NXP

NPN switching transistor in a TO-126; SOT32 plastic package. handbook, halfpage BDX35; BDX36; BDX37 PINNING PIN 1 2 3 e.

BDX35 - INCHANGE

··High Current Capability-IC= 5A(DC) ·DC Current Gain— : hFE = 45-450(Min) @ IC= 0.5 A ·Collector-Emitter Breakdown Volt.

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BDX35 - Comset Semiconductors