BDX14A - Inchange Semiconductor

BDX14A Silicon PNP Power Transistor

·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -55V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF Large Signal Power Amplification and Medium Current Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-.

Features

25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 VCER(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; RBE= 100Ω V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA VBE(on) Base-Emitter On Voltage ICEX Collector Cutoff Current hFE DC Current Gain IC= -0.5A; VCE= -4V VCE= -90V; VBE= 1.5V VCE= -30V; VBE= 1.5V,TC=150℃ IC= -0.5A; VCE= -4V fT Current Gain-Bandwidth Product IC= -0.2A; VCE= -10V BDX14A MIN MAX UNIT -55 V -60 V -7.