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BDW83B - INCHANGE

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BDW83B NPN Transistor

·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDW83 45 VCER Col.

Features

ent 35.7 ℃/W BDW83/A/B/C isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW83/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW83 45 V(BR)CEO Collector-Emitter Breakdown Voltage BDW83A BDW83B IC= 30mA ;IB=0 60 80 V BDW83C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 12mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 150mA 4.0 V VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 3V 2.5 V VECF C-E Di.

The same part from a different manufacturer

Datasheet BDW83B - SavantIC BDW83B

·With TO-3PN package www.datasheet4u.com ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APP.

Datasheet BDW83B - Bourns BDW83B

BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84.

Datasheet BDW83B - Comset Semiconductors BDW83B

NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN.

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