·Collector Current -IC= 15A ·High DC Current Gain-hFE= 750(Min)@ IC= 6A ·Complement to Type BDW84/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDW83 45 VCER Col.
ent 35.7 ℃/W BDW83/A/B/C isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BDW83/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW83 45 V(BR)CEO Collector-Emitter Breakdown Voltage BDW83A BDW83B IC= 30mA ;IB=0 60 80 V BDW83C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 12mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 150mA 4.0 V VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 3V 2.5 V VECF C-E Di.
·With TO-3PN package www.datasheet4u.com ·Complement to type BDW84/84A/84B/84C/84D ·DARLINGTON ·High DC current gain APP.
BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW84, BDW84.
NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base NPN.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | BDW83 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | BDW83 |
Bourns |
NPN SILICON POWER DARLINGTONS | |
3 | BDW83 |
Comset Semiconductors |
NPN SILICON POWER DARLINGTONS | |
4 | BDW83 |
INCHANGE |
NPN Transistor | |
5 | BDW83A |
SavantIC |
SILICON POWER TRANSISTOR | |
6 | BDW83A |
Bourns |
NPN SILICON POWER DARLINGTONS | |
7 | BDW83A |
Comset Semiconductors |
NPN SILICON POWER DARLINGTONS | |
8 | BDW83A |
INCHANGE |
NPN Transistor | |
9 | BDW83C |
INCHANGE |
NPN Transistor | |
10 | BDW83C |
STMicroelectronics |
NPN power Darlington transistor | |
11 | BDW83C |
SavantIC |
SILICON POWER TRANSISTOR | |
12 | BDW83C |
Bourns |
NPN SILICON POWER DARLINGTONS |